Recent Progress in SiC DMOSFETs and JBS Diodes at Cree

被引：0

作者：

Callanan, Robert J. ^{[1
]}

Agarwal, Anant ^{[1
]}

Burk, Al ^{[1
]}

Das, Mrinal ^{[1
]}

Hull, Brett ^{[1
]}

Husna, Fatima ^{[1
]}

Powell, Adrian ^{[1
]}

Richmond, Jim ^{[1
]}

Ryu, Sei-Hyung ^{[1
]}

Zhang, Qingchun ^{[1
]}

机构：

[1] Cree Inc, Durham, NC 27703 USA

来源：

IECON 2008: 34TH ANNUAL CONFERENCE OF THE IEEE INDUSTRIAL ELECTRONICS SOCIETY, VOLS 1-5, PROCEEDINGS | 2008年

关键词：

D O I：

暂无

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

This paper discusses the recent progress in large area silicon carbide (SiC) DMOSFETs and junction barrier Schottky (JBS) diodes. 1.2 kV and 10 W SiC DMOSFETs have been produced with die areas greater than 0.64 cm(2). SiC JBS diode dies also rated at 1.2 W and 10 W have been produced with die areas exceeding 1.5 cm(2). These results demonstrate that SiC power devices provide a significant leap forward in performance for industrial electronics applications. At 1.2 W, SiC DMOSFETs offer a reduction of power loss of greater than 50 % with dies less than half the size when compared to silicon (Si) IGBTs. The SiC JBS diodes offer significant reductions in reverse recovery losses. At 10 W, there are no Si devices that can compete with SiC on a single device basis. Data on 1.2 W and 10 W devices are presented along with future trends.

引用

页码：2792 / 2797

页数：6

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