Analog Memory Characteristics of 1T1R MoOx Resistive Random Access Memory

被引：0

作者：

Jo, Mingyu ^{[1
]}

Katsumura, Reon ^{[1
]}

Tsurumaki-Fukuchi, Atsushi ^{[1
]}

Arita, Masashi ^{[1
]}

Takahashi, Yasuo ^{[1
]}

Ando, Hideyuki ^{[2
]}

Morie, Takashi ^{[2
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Sapporo, Hokkaido, Japan

[2] Kyushu Inst Technol, Grad Sch Life Sci & Syst Engn, Kitakyushu, Fukuoka, Japan

来源：

2016 IEEE SILICON NANOELECTRONICS WORKSHOP (SNW) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multilevel resistive random access memory (ReRAM) is known as a key device for neural networks and reconfigurable computing. Control of the resistance is important to utilize ReRAM as an analog-resistance memory. In this study, we confirm that MoOx ReRAM shows analog memory characteristics by the control of compliance current. In addition, we propose a verification method to achieve target resistances.

引用

页码：78 / 79

页数：2

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