An On-line Test Strategy and Analysis for a 1T1R Crossbar Memory

被引:0
|
作者
Escudero-Lopez, Manuel [1 ]
Moll, Francesc [1 ]
Rubio, Antonio [1 ]
Vourkas, Ioannis [2 ]
机构
[1] Univ Politecn Cataluna, Dept Elect Engn, Barcelona, Spain
[2] Pontificia Univ Catolica Chile, Dept Elect Engn, Santiago, Chile
关键词
D O I
暂无
中图分类号
TP301 [理论、方法];
学科分类号
081202 ;
摘要
Memristors are emerging devices known by their nonvolability, compatibility with CMOS processes and high density in circuits density in circuits mostly owing to the crossbar nanoarchitecture. One of their most notable applications is in the memory system field. Despite their promising characteristics and the advancements in this emerging technology, variability and reliability are still principal issues for memristors. For these reasons, exploring techniques that check the integrity of circuits is of primary importance. Therefore, this paper proposes a method to perform an on-line test capable to detect a single failure inside the memory crossbar array.
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页码:120 / 125
页数:6
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