Material origins of line-edge roughness: Monte Carlo simulations and scaling analysis

被引：1
|
作者：
Patsis, GP [1 ]
Constantoudis, V [1 ]
Gogolides, E [1 ]
机构：
[1] NCSR Demokritos, Inst Microelect, Athens 15310, Greece
来源：
ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2 | 2004年 / 5376卷
关键词：
D O I：
10.1117/12.535202
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A fast 2D/3D resist dissolution algorithm is used to quantify line-edge roughness and determine its relation to resist material parameters, such as the polymerization length distribution, the end-to-end distance and the radius of gyration, along with the effects of acid-diffusion. The same relation between surface roughness and exposure dose known to hold experimentally is also shown to be valid for line-edge roughness. Increasing average polymerization length results in increased values of line-edge roughness, radius of gyration and end-to-end distance establishing an immediate relation between material properties and measured line-edge roughness (LER). The effects of the edge depth and length of measurement and of the free volume on LER vs. are also investigated.
引用
收藏
页码：773 / 781
页数：9
相关论文
共 50 条
  • [41] Investigating line-edge roughness in calixarene fine patterns using Fourier analysis
    Ishida, M
    Kobayashi, K
    Fujita, J
    Ochiai, Y
    Yamamoto, H
    Tono, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (6B): : 4228 - 4232
  • [42] Resist materials providing small line-edge roughness
    Namatsu, H
    Yamaguchi, T
    Kurihara, K
    [J]. MATERIALS ISSUES AND MODELING FOR DEVICE NANOFABRICATION, 2000, 584 : 135 - 146
  • [43] Global minimization line-edge roughness analysis of top down SEM images
    Lane, Barton
    Mack, Chris
    Eibagi, Nasim
    Ventzek, Peter
    [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXXI, 2017, 10145
  • [44] Image-pixel averaging for accurate analysis of line-edge and linewidth roughness
    Hiraiwa, Atsushi
    Nishida, Akio
    [J]. JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, 2011, 10 (02):
  • [45] Power Spectrum of Smoothed Line-Edge and Line-Width Roughness
    Hiraiwa, Atsushi
    Nishida, Akio
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (08)
  • [46] Measurement of sidewall, line and line-edge roughness with scanning probe microscopy
    Walch, K
    Meyyappan, A
    Muckenhirn, S
    Margail, J
    [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XV, 2001, 4344 : 726 - 732
  • [47] Effects of model polymer chain architectures of photo-resists on line-edge-roughness - Monte Carlo simulations
    Patsis, GP
    Gogolides, E
    [J]. Second Conference on Microelectronics, Microsystems and Nanotechnology, 2005, 10 : 389 - 392
  • [48] System-level impact of interconnect line-edge roughness
    Baert, R.
    Ciofi, I.
    Roussel, Ph.
    Mattii, L.
    Debacker, P.
    Toekei, Zs.
    [J]. 2018 IEEE INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE (IITC), 2018, : 67 - 69
  • [49] Electronic transport in graphene nanoribbons with correlated line-edge roughness
    Mazaherifar, Mohsen
    Mojibpour, Ali
    Pourfath, Mandi
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2019, 52 (37)
  • [50] Level crossing methodology applied to line-edge roughness characterization
    Mack, Chris A.
    Brunner, Timothy A.
    Chen, Xuemei
    Sun, Lei
    [J]. METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XXXI, 2017, 10145
12345