Investigation of GaN layer grown on different low misoriented sapphire by MOCVD

被引：8

作者：

Xing Yanhui ^{[1
]}

Han Jun ^{[1
]}

Deng Jun ^{[1
]}

Li Jianjun ^{[1
]}

Xu Chen ^{[1
]}

Shen Guangdi ^{[1
]}

机构：

[1] Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100124, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 12期

关键词：

Nitrides; Atom force microscopy; Metal organic chemical vapor deposition; Electron back-scatter diffraction; Photoluminescence; CHEMICAL-VAPOR-DEPOSITION; SUBSTRATE MISORIENTATION;

D O I：

10.1016/j.apsusc.2009.01.063

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

GaN layer on c-plane misoriented sapphire, grown by metal organic chemical vapor deposition, has been studied. It was observed that the random and non-uniform distribution of the step was caused by the step reconstruction for GaN grown on 08 sapphire by atomic force microscopy. The image quality parameter analysis of electron back-scatter diffraction indicated that the strains were reduced for GaN grown on 0.28 and 0.38 sapphire, and optical and electrical properties were improved. The electroluminescence intensity of LED grown on 0.28 and 0.38 sapphire was 2 times as that of 08 sapphire. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：6121 / 6124

页数：4

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