TEM observation of two-dimensional defects in CdTe crystals

被引：0
|
作者：
Milenov, T. I.
Dimov, V. I.
Gospodinov, M. M.
机构：
[1] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria
[2] Bulgarian Acad Sci, Cent Lab Mineral & Crystallog, BU-1113 Sofia, Bulgaria
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2007年 / 9卷 / 02期
关键词：
CdTe; transmission electron microscopy; lattice defects; computer simulation;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A specimen from a melt-grown CdTe crystal was prepared by the "suspension" method. Selected area electron diffraction (SAED) image revealed the presence of stacking faults and a twice twinned crystal lattice in the examined specimen. Many dislocations, stacking faults as well as first-order and second-order twin boundaries, accompanied by many dislocations lying in (or close to) the grain boundary plane were observed in the diffraction contrast mode images. The main types of the existing defects were modeled, and the corresponding SAED pattern images were successfully simulated.
引用
收藏
页码：289 / 292
页数：4
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