Advanced passive devices for enhanced integrated RF circuit performance

被引：34

作者：

Coolbaugh, D ^{[1
]}

Eshun, E ^{[1
]}

Groves, R ^{[1
]}

Harame, D ^{[1
]}

Johnson, J ^{[1
]}

Hammad, M ^{[1
]}

He, Z ^{[1
]}

Ramachandran, V ^{[1
]}

Stein, K ^{[1
]}

St Onge, S ^{[1
]}

Subbanna, S ^{[1
]}

Wang, D ^{[1
]}

Volant, R ^{[1
]}

Wang, X ^{[1
]}

Watson, K ^{[1
]}

机构：

[1] IBM Corp, Essex Jct, VT 05452 USA

来源：

2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2002年

关键词：

D O I：

10.1109/RFIC.2002.1012063

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

State of the art passive devices have been developed for optimum RF circuit performance. These devices include a hyperabrupt junction varactor with tunability (Cmax/Cmin) of 3.3, an accumulation mode MOS varactor, high capacitance nitride metal-insulator-metal capacitors, a BEOL TaN resistor and very high Q inductors with a peak Q of 28 at 3.5 Ghz. VCO simulations using several of these elements show a significant reduction in VCO gain variation, phase noise, and power consumption.

引用

页码：341 / 344

页数：4

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