RF passive devices on Si with excellent performance close to ideal devices designed by electro-magnetic simulation

被引：0

作者：

Chin, A ^{[1
]}

Chan, KT ^{[1
]}

Huang, CH ^{[1
]}

Chen, C ^{[1
]}

Liang, V ^{[1
]}

Chen, JK ^{[1
]}

Chien, SC ^{[1
]}

Sung, SW ^{[1
]}

Duh, DS ^{[1
]}

Lin, WJ ^{[1
]}

Zhu, CX ^{[1
]}

Li, MF ^{[1
]}

McAlister, SP ^{[1
]}

Kwong, DL ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu, Taiwan

来源：

2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST | 2003年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

High quality RF inductors, very low loss and noise CPW and microstrip lines, advanced broad and narrow band filters, and ring resonators have been achieved on Si substrates, using an optimized proton implantation process. The RF performance up to 100 GHz is close to that for ideal devices designed by EM simulation for lossless substrates.

引用

页码：375 / 378

页数：4

共 32 条

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