Polarization of the interband optical dipole in InAs/GaAs self-organized quantum dots

被引：2
|
作者：
Cortez, S
Krebs, O
Voisin, P
Gérard, JM
机构：
[1] Ecole Normale Super, Phys Mat Condensee Lab, F-75005 Paris, France
[2] Lab Concepts & Dispositifs Photon, F-92220 Bagneux, France
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期
关键词：
quantum dots; luminescence polarization; optical selection rules;
D O I：
10.1016/S1386-9477(01)00524-0
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We present measurements of the optical dipole of interband transitions in InAs GaAs quantum dots, Both the transmission in guided-wave geometry and the in-plane polarization dependence of the photoluminescence are analyzed. The relative oscillator strength and polarization of up to four optical transitions have been determined, and the electronic structure is discussed, with focus on the heavy-hole versus light-hole character of valence suites. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：220 / 223
页数：4
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