Fabrication of high power, high-efficiency linear array diode lasers by pulse anodic oxidation

被引：0
|
作者：
Xin, Gao [1 ]
Jing, Zhang [1 ]
Hui, Li [1 ]
Yi, Qu [1 ]
Bo Baoxue [1 ]
机构：
[1] Changchun Univ Sci & Technol, Changchun, Peoples R China
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2006年 / 45卷 / 9A期
关键词：
lasers; anodic oxidation; strained quantum well; linear array diode laser;
D O I：
10.1143/JJAP.45.6845
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InGaAlAs/AlGaAs/GaAs double-quantum-well (DQW) linear array diode lasers with asymmetric wide waveguide have been successfully fabricated by pulse anodic oxidation upon molecular beam epitaxy material growth. High-efficiency and high-power quasi-continuous-wave (QCW) output has been realized at 808 nm wavelength. The threshold current and slope efficiency of the prepared high-fill-factor QCW devices are 24 A and 1.25 A/W, respectively, and a maximum wall-plug efficiency of 51% has been achieved.
引用
收藏
页码：6845 / 6848
页数：4
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