Next-generation high-power, high-efficiency diode lasers at spectra-physics

被引：1

作者：

Li, Hanxuan ^{[1
]}

Chyr, Irving ^{[1
]}

Brown, Denny ^{[1
]}

Reinhardt, Frank ^{[1
]}

Romero, Oscar ^{[1
]}

Chen, Chia-Hung ^{[1
]}

Miller, Robert ^{[1
]}

Kuppuswamy, Kiran ^{[1
]}

Jin, Xu ^{[1
]}

Nguyen, Touyen ^{[1
]}

Towe, Terry ^{[1
]}

Crum, Trevor ^{[1
]}

Mitchell, Cameron ^{[1
]}

Truchan, Tom ^{[1
]}

Bullock, Robert ^{[1
]}

Wolak, Ed ^{[1
]}

Mott, Jeff ^{[1
]}

Harrison, James ^{[1
]}

机构：

[1] Spectra Phys Lasers, Div Newport Corp, Tucson, AZ 85706 USA

来源：

SEMICONDUCTOR LASERS AND APPLICATIONS III | 2008年 / 6824卷

关键词：

diode lasers; laser bar; laser stack; power conversion efficiency; high power; reliability;

D O I：

10.1117/12.754803

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper gives an overview of recent product development and advanced engineering of diode laser technology at Spectra-Physics. Focused development of device design, heat-sinking and beam-conditioning has yielded significant improvement in both power conversion efficiency (PCE) and reliable power, leading to a family of new products. CW PCEs of 60% to 70% have been delivered for the 880 to 980 run wavelength range. For 780 to 8 10 nm, PCE are typically between 50% and 56%. Comprehensive life-testing indicates that the reliable powers of devices based on the new developments exceed those of established, highly reliable, production designs. For the progress of ultra-high power bars, CW output power in excess of 1000 W and 640 W have been demonstrated from single laser bars with doubled-side and single-side cooling, respectively. Spatial power density of greater than 2.8 kW/cm(2) and FWHM spectral widths of 3.5 nm have been obtained from laser stacks.

引用

页数：12

共 50 条

[1] Continuous Improvement of High-Efficiency, High-Power 800-980nm Diode Lasers at Spectra-Physics
Li, Hanxuan
Towe, Terry
Chyr, Irving
Jin, Xu
Miller, Robert
Romero, Oscar
Liu, Daming
Brown, Denny
Truchan, Tom
Nguyen, Touyen
Crum, Trevor
Wolak, Ed
Bullock, Robert
Mott, Jeff
Harrison, James
[J]. HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS VII, 2009, 7198
[2] High-efficiency diode lasers at high output power
Wang, J
Smith, B
Xie, XM
Wang, X
Burnham, GT
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (11) : 1525 - 1527
[3] High-power guidestar lasers are ready for next-generation AO astronomy
Denman, Craig
Clements, Wallace R.
Kaenders, Wilhelm
[J]. LASER FOCUS WORLD, 2010, 46 (06): : 27 - +
[4] Ongoing development of high-efficiency and high-reliability laser diodes at spectra-physics
Li, Hanxuan
Chyr, Irving
Brown, Denny
Jin, Xu
Reinhardt, Frank
Towe, Terry
Nguyen, Touyen
Srinivasan, Raman
Berube, Myra
Miller, Robert
Kuppuswamy, Kiran
Hu, Yongdan
Crum, Trevor
Truchan, Tom
Harrison, James
[J]. HIGH-POWER DIODE LASER TECHNOLOGY AND APPLICATIONS V, 2007, 6456
[5] High-power, high-efficiency GaInP/AlGaInP laser diode
Savolainen, P
Pessa, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (11B): : L1501 - L1502
[6] High-power diode lasers
Wolff, D
[J]. PHOTONICS SPECTRA, 2000, 34 (01) : 91 - 92
[7] High-power, high-efficiency 808 nm laser diode array
Wang Zhen-Fu
Yang Guo-Wen
Wu Jian-Yao
Song Ke-Chang
Li Xiu-Shan
Song Yun-Fei
[J]. ACTA PHYSICA SINICA, 2016, 65 (16)
[8] MICROSTRIP HIGH-POWER HIGH-EFFICIENCY AVALANCHE-DIODE OSCILLATOR
LIU, SG
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1969, MT17 (12) : 1068 - +
[9] HIGH-POWER AND HIGH-EFFICIENCY LASERS GROWN ON CHANNELED SUBSTRATES BY MBE
VANGIESON, E
MEIER, HP
MOSER, A
JACKEL, H
HARDER, C
WALTER, W
[J]. INSTITUTE OF PHYSICS CONFERENCE SERIES <D>, 1989, (96): : 519 - 542
[10] High-power, high-efficiency SHG blue lasers vs GaN
[J]. III-Vs Review, 2001, 14 (09)

← 1 2 3 4 5 →