Wurtzite (Ga,Mn)As nanowire shells with ferromagnetic properties

被引:14
|
作者
Sadowski, J. [1 ,2 ,3 ]
Kret, S. [3 ]
Siusys, A. [3 ]
Wojciechowski, T. [3 ]
Gas, K. [3 ]
Islam, M. F. [2 ]
Canali, C. M. [2 ]
Sawicki, M. [3 ]
机构
[1] Lund Univ, MAX Lab 4, POB 118, SE-22100 Lund, Sweden
[2] Linnaeus Univ, Dept Phys & Elect Engn, SE-39182 Kalmar, Sweden
[3] Polish Acad Sci, Inst Phys, Aleja Lotnikow 32-46, PL-02668 Warsaw, Poland
关键词
MOLECULAR-BEAM EPITAXY; DOPED GAAS NANOWIRES; MAGNETIC-PROPERTIES; SEMICONDUCTORS;
D O I
10.1039/c6nr08070g
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
(Ga,Mn)As having a wurtzite crystal structure was coherently grown by molecular beam epitaxy on the {1100} side facets of wurtzite (Ga,In)As nanowires and further encapsulated by (Ga,Al)As and low temperature GaAs. For the first time, a truly long-range ferromagnetic magnetic order is observed in non-planar (Ga,Mn)As, which is attributed to a more effective hole confinement in the shell containing Mn by the proper selection/choice of both the core and outer shell materials.
引用
收藏
页码:2129 / 2137
页数:9
相关论文
共 50 条
  • [41] Diode Heterostructures with a Ferromagnetic (Ga,Mn)As Layer
    B. N. Zvonkov
    O. V. Vikhrova
    Yu. A. Danilov
    M. V. Dorokhin
    I. L. Kalentyeva
    A. V. Kudrin
    A. V. Zdoroveyshchev
    E. A. Larionova
    V. A. Koval’skii
    O. A. Soltanovich
    [J]. Physics of the Solid State, 2020, 62 : 423 - 430
  • [42] Weak localization in ferromagnetic (Ga,Mn)As nanostructures
    Neumaier, D.
    Wagner, K.
    Geissler, S.
    Wurstbauer, U.
    Sadowski, J.
    Wegscheider, W.
    Weiss, D.
    [J]. PHYSICAL REVIEW LETTERS, 2007, 99 (11)
  • [43] Ferromagnetic semiconductors: moving beyond (Ga, Mn)As
    Macdonald, AH
    Schiffer, P
    Samarth, N
    [J]. NATURE MATERIALS, 2005, 4 (03) : 195 - 202
  • [44] Magnetization relaxation in (Ga,Mn)As ferromagnetic semiconductors
    Sinova, J
    Jungwirth, T
    Liu, X
    Sasaki, Y
    Furdyna, JK
    Atkinson, WA
    MacDonald, AH
    [J]. PHYSICAL REVIEW B, 2004, 69 (08)
  • [45] Magnetization dissipation in the ferromagnetic semiconductor (Ga,Mn)As
    Hals, Kjetil M. D.
    Brataas, Arne
    [J]. PHYSICAL REVIEW B, 2011, 84 (10)
  • [46] Remnant magnetoresistance in ferromagnetic (Ga,Mn)As nanostructures
    Figielski, T.
    Wosinski, T.
    Morawski, A.
    Makosa, A.
    Wrobel, J.
    Sadowski, J.
    [J]. APPLIED PHYSICS LETTERS, 2007, 90 (05)
  • [47] Magnetoresistive memory in ferromagnetic (Ga,Mn)As nanostructures
    Wosinski, T.
    Figielski, T.
    Morawski, A.
    Makosa, A.
    Szymczak, R.
    Wrobel, J.
    Sadowski, J.
    [J]. MATERIALS SCIENCE-POLAND, 2008, 26 (04): : 1097 - 1104
  • [48] Theory of spin waves in ferromagnetic (Ga,Mn)As
    Werpachowska, A.
    Dietl, T.
    [J]. PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [49] Photoinduced precession of magnetization in ferromagnetic (Ga,Mn)As
    Hashimoto, Y.
    Kobayashi, S.
    Munekata, H.
    [J]. PHYSICAL REVIEW LETTERS, 2008, 100 (06)
  • [50] (Ga,Mn) As/AlAs digital ferromagnetic heterostructures
    Sanvito, Stefano
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2004, 272 : E1583 - E1584