(Ga,Mn) As/AlAs digital ferromagnetic heterostructures

被引：0
|
作者：
Sanvito, Stefano [1 ]
机构：
[1] Univ Dublin Trinity Coll, Dept Phys, Dublin 2, Ireland
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2004年 / 272卷
关键词：
magnetic semiconductors; ferromagnetism; DFT; LSDA;
D O I：
10.1016/j.jmmm.2003.12.539
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We present a density functional theory study of (Ga, Mn) As/AlAs digital ferromagnetic heterostructures, which can be obtained by delta-doping with Mn the GaAs layers of a short period GaAs/AlAs superlattice. In these structures band engineering allows us to improve the hole confinement in the Mn layer, and therefore to enhance the Mn - Mn ferromagnetic coupling over that of ( Ga, Mn) As/GaAs heterostructures. In particular we investigate how the ferromagnetism depends on the thickness of the AlAs layer. Our analysis suggests that ( Ga, Mn) As/AlAs heterostructures are good candidates for spintronics applications. (C) 2003 Elsevier B. V. All rights reserved.
引用
收藏
页码：E1583 / E1584
页数：2
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