Growth, structural, and electrical investigation of self-assembled InAs quantum wires on (001)InP

被引：51
|
作者：
Walther, C
Hoerstel, W
Niehus, H
Erxmeyer, J
Masselink, WT
机构：
[1] Humboldt Univ, Dept Phys, D-10115 Berlin, Germany
[2] Fachhsch Tech Wirtschaft & Gestaltung Wismar, Dept Elect Engn & Comp Sci, D-23966 Wismar, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 04期
关键词：
quantum wires; strained epitaxy; InAs; MBE; quantum dots;
D O I：
10.1016/S0022-0248(99)00761-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The deposition of lattice mismatched InAs on (0 0 1)InP by gas source molecular beam epitaxy leads to the formation of quantum sires in contrast to the familiar dot formation in the InAs/GaAs system. The paper describes two processes: (i) the formation of a two-dimensional, alloyed layer InAsyP1-y in a pre-deposition phase and (ii) the strain relaxation process into wire-like structures, when depositing InAs on top. The quantum wires have been investigated using atomic force microscopy, transmission electron microscopy, and transport anisotropy measurements. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：572 / 580
页数：9
相关论文
共 50 条
  • [31] Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots
    Yoon, S
    Moon, Y
    Lee, TW
    Hwang, H
    Yoon, E
    Kim, YD
    Lee, UH
    Lee, D
    Kim, HS
    Lee, JY
    JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (05) : 535 - 541
  • [32] Effects of growth interruption on the evolution of InAs/InP self-assembled quantum dots
    Sukho Yoon
    Youngboo Moon
    Tae-Wan Lee
    Heedon Hwang
    Euijoon Yoon
    Young Dong Kim
    Uk Hyun Lee
    Donghan Lee
    Hong-Seung Kim
    Jeong Yong Lee
    Journal of Electronic Materials, 2000, 29 : 535 - 541
  • [33] Growth of self-assembled InAs quantum dots for InP- based heterostructures
    Gazula, D
    Zhang, MH
    Deppe, DG
    QUANTUM DOTS, NANOPARTICLES, AND NANOCLUSTERS, 2004, 5361 : 15 - 20
  • [34] Chemical beam epitaxy growth of self-assembled InAs/InP quantum dots
    Poole, PJ
    McCaffrey, J
    Williams, RL
    Lefebvre, J
    Chithrani, D
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04): : 1467 - 1470
  • [35] Influence of In and As fluxes on growth of self-assembled InAs quantum dots on GaAs(001)
    Kamiya, Itaru
    Shirasaka, Takeo
    Shimomura, Kenichi
    Tex, David M.
    JOURNAL OF CRYSTAL GROWTH, 2011, 323 (01) : 219 - 222
  • [36] Optical properties of self-assembled InAs quantum islands grown on InP(001) vicinal substrates
    Salem, B
    Olivares, J
    Guillot, G
    Bremond, G
    Brault, J
    Monat, C
    Gendry, M
    Hollinger, G
    Hassen, F
    Maaref, H
    APPLIED PHYSICS LETTERS, 2001, 79 (26) : 4435 - 4437
  • [37] Self-assembled InAs quantum dots on InP(001) for long-wavelength laser applications
    Kim, JS
    Lee, JH
    Hong, SU
    Kwack, HS
    Lee, CW
    Oh, DK
    ETRI JOURNAL, 2004, 26 (05) : 475 - 480
  • [38] Size-filtering effects by stacking InAs/InP (001) self-assembled quantum wires into multilayers -: art. no. 241301
    Alén, B
    Martínez-Pastor, J
    González, L
    García, JM
    Molina, SI
    Ponce, A
    García, R
    PHYSICAL REVIEW B, 2002, 65 (24) : 2413011 - 2413014
  • [39] Effect of growth interruption on photoluminescence of self-assembled InAs quantum dot structures grown on (001) InP substrate by MOCVD
    Wang, BZ
    Chua, SJ
    Wang, ZJ
    Liu, SY
    PHYSICA E, 2000, 8 (03): : 290 - 295
  • [40] Evolution of self-assembled InAs/InP islands into quantum rings
    Sormunen, J
    Riikonen, J
    Hakkarainen, T
    Sopanen, M
    Lipsanen, H
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (42-45): : L1323 - L1325
12345