Evolution of self-assembled InAs/InP islands into quantum rings

被引：2
|
作者：
Sormunen, J [1 ]
Riikonen, J [1 ]
Hakkarainen, T [1 ]
Sopanen, M [1 ]
Lipsanen, H [1 ]
机构：
[1] Helsinki Univ Technol, Optoelect Lab, Micronova, FIN-02015 Helsinki, Finland
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2005年 / 44卷 / 42-45期
关键词：
quantum rings; quantum dots; InAs islands; self-assembled growth; photoluminescence;
D O I：
10.1143/JJAP.44.L1323
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Fabrication of quantum rings (QRs) by transforming self-assembled InAs islands on InP is studied. The islands are annealed in-situ in a tertiarybutylphosphine ambient at varying temperatures. The duration of the annealing step is also varied. A partial capping of the InAs islands is not required to achieve the morphological change into rings. The evolution of the transformation is observed ex-situ by atomic force microscopy and photoluminescence measurements. The morphological transformation is accompanied by a compositional change of InAs into InAsP. The results support our conclusions that the QR formation is mostly due to strain-driven kinetic effects.
引用
收藏
页码：L1323 / L1325
页数：3
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