Self-assembled InAs quantum wires on InP(001)

被引：0
|
作者：
Wu, J [1 ]
Zeng, YP [1 ]
Sun, ZZ [1 ]
Lin, F [1 ]
Xu, B [1 ]
Wang, ZG [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China
来源：
SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/SIM.2000.939227
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Self-assembled InAs quantum wires (QWRs) embedded in In0.52Al0.48As In0.53Ga0.47As, and (In0.52Al0.48As)(2)/(In(0.53)Ga(0.47)AS)(2)-short-period-lattice matrixes on InP (001) were fabricated with molecular beam epitaxy (MBE). These QWR lines are along [110], x4 direction in the 2x4 reconstructed (001) surface as revealed with high energy electron diffraction (RHEED). Alignment of quantum wires in a multilayer structure depends on the composition of spacer layers.
引用
收藏
页码：205 / 208
页数：4
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