Growth, structural, and electrical investigation of self-assembled InAs quantum wires on (001)InP

被引：51
|
作者：
Walther, C
Hoerstel, W
Niehus, H
Erxmeyer, J
Masselink, WT
机构：
[1] Humboldt Univ, Dept Phys, D-10115 Berlin, Germany
[2] Fachhsch Tech Wirtschaft & Gestaltung Wismar, Dept Elect Engn & Comp Sci, D-23966 Wismar, Germany
来源：
JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 04期
关键词：
quantum wires; strained epitaxy; InAs; MBE; quantum dots;
D O I：
10.1016/S0022-0248(99)00761-7
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The deposition of lattice mismatched InAs on (0 0 1)InP by gas source molecular beam epitaxy leads to the formation of quantum sires in contrast to the familiar dot formation in the InAs/GaAs system. The paper describes two processes: (i) the formation of a two-dimensional, alloyed layer InAsyP1-y in a pre-deposition phase and (ii) the strain relaxation process into wire-like structures, when depositing InAs on top. The quantum wires have been investigated using atomic force microscopy, transmission electron microscopy, and transport anisotropy measurements. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：572 / 580
页数：9
相关论文
共 50 条
  • [1] Self-assembled InAs quantum wires on InP(001)
    Yang, HY
    Mu, XD
    Zotova, IB
    Ding, YJJ
    Salamo, GJ
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (06) : 3925 - 3927
  • [2] Self-assembled InAs quantum wires on InP(001)
    Wu, J
    Zeng, YP
    Sun, ZZ
    Lin, F
    Xu, B
    Wang, ZG
    JOURNAL OF CRYSTAL GROWTH, 2000, 219 (1-2) : 180 - 183
  • [3] Self-assembled InAs quantum wires on InP(001)
    Wu, J
    Zeng, YP
    Sun, ZZ
    Lin, F
    Xu, B
    Wang, ZG
    SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS, 2000, : 205 - 208
  • [4] Raman study on self-assembled InAs/InAlAs/InP(001) quantum wires
    Lei, W
    Chen, YH
    Xu, B
    Ye, XL
    Zeng, YP
    Wang, ZG
    NANOTECHNOLOGY, 2005, 16 (09) : 1974 - 1977
  • [5] Luminescence and photocurrent spectroscopy of self-assembled InAs quantum wires on InP(001).
    Suárez, F
    Wang, W
    Fuster, D
    González, L
    González, Y
    Golmayo, D
    García, JM
    Dotor, ML
    2005 International Conference on Indium Phosphide and Related Materials, 2005, : 530 - 532
  • [6] Isolated self-assembled InAs/InP(001) quantum wires obtained by controlling the growth front evolution
    Fuster, David
    Alen, Benito
    Gonzalez, Luisa
    Gonzalez, Yolanda
    Martinez-Pastor, Juan
    Gonzalez, Maria Ujue
    Garcia, Jorge M.
    NANOTECHNOLOGY, 2007, 18 (03)
  • [7] Structural and optical properties of InAs/In0.52Al0.48As self-assembled quantum wires on InP(001)
    Wang, YL
    Chen, YH
    Wu, J
    Lei, W
    Wang, ZG
    Zeng, YP
    JOURNAL OF CRYSTAL GROWTH, 2005, 284 (3-4) : 306 - 312
  • [8] Excitons in coupled InAs/InP self-assembled quantum wires
    Sidor, Y.
    Partoens, B.
    Peeters, F. M.
    Ben, T.
    Ponce, A.
    Sales, D. L.
    Molina, S. I.
    Fuster, D.
    Gonzalez, L.
    Gonzalez, Y.
    PHYSICAL REVIEW B, 2007, 75 (12):
  • [9] Self-assembled InAs quantum wires on InP (001) (vol 219, pg 180, 2000)
    Wu, J
    Zeng, YP
    Sun, ZZ
    Lin, F
    Xu, B
    Wang, ZG
    JOURNAL OF CRYSTAL GROWTH, 2000, 219 (04) : 495 - 495
  • [10] Pressure dependence of photoluminescence of InAs/InP self-assembled quantum wires
    Ruiz-Castillo, M.
    Segura, A.
    Sans, J. A.
    Martinez-Pastor, J.
    Fuster, D.
    Gonzalez, Y.
    Gonzalez, L.
    PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2007, 244 (01): : 59 - 64
12345