Effect of in-doping on the properties of as-grown p-type GaN grown by metalorganic vapour phase epitaxy

被引：0

作者：

Yamaguchi, S

Iwamura, Y

Watanabe, Y

Kosaki, M

Yukawa, Y

Nitta, S

Kamiyama, S

Amano, H

Akasaki, I

机构：

[1] Kanagawa Univ, Dept Elect Elect & Informat Engn, Kanagawa Ku, Yokohama, Kanagawa 2218686, Japan

[2] Meijo Univ, Dept E&E Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[3] Meijo Univ, Dept Mat Sci & Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[4] Meijo Univ, HRC, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 2002年 / 192卷 / 02期

关键词：

D O I：

10.1002/1521-396X(200208)192:2<453::AID-PSSA453>3.0.CO;2-I

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

As-grown p-GaN was characterized using Hall measurement and X-ray diffraction analysis mainly at room temperature. All samples were grown by metalorganic vapour phase epitaxy. p-type GaN was grown using Cp2Mg as a dopant and In-doping during the GaN growth. Only using In-doping, GaN-Mg was activated at room temperature even without a thermal annealing process. A hole concentration of as high as 5 x 10(17) cm(-3) was achieved. As a whole trend, decreasing the biaxial strain and the twist in as-grown p-GaN resulted in an increase of the hole concentration.

引用

页码：453 / 455

页数：3

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