Effect of in-doping on the properties of as-grown p-type GaN grown by metalorganic vapour phase epitaxy

As-grown p-GaN was characterized using Hall measurement and X-ray diffraction analysis mainly at room temperature. All samples were grown by metalorganic vapour phase epitaxy. p-type GaN was grown using Cp2Mg as a dopant and In-doping during the GaN growth. Only using In-doping, GaN-Mg was activated at room temperature even without a thermal annealing process. A hole concentration of as high as 5 x 10(17) cm(-3) was achieved. As a whole trend, decreasing the biaxial strain and the twist in as-grown p-GaN resulted in an increase of the hole concentration.