Electrical and crystalline properties of as-grown p-type GaN grown by metalorganic vapor phase epitaxy

被引：3

作者：

Yamaguchi, S

Iwamura, Y

Watanabe, Y

Kosaki, M

Yukawa, Y

Nitta, S

Kamiyama, S

Amano, H

Akasaki, I

机构：

[1] Kanagawa Univ, Dept Elect Elect & Informat Engn, Kanagawa Ku, Yokohama, Kanagawa 2218686, Japan

[2] Meijo Univ, Dept Elect & Elect Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[3] Meijo Univ, Dept Mat Sci & Engn, Tempaku Ku, Nagoya, Aichi 4688502, Japan

[4] Meijo Univ, HRC, Tempaku Ku, Nagoya, Aichi 4688502, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 248卷

关键词：

doping; p-type doping; metalorganic vapor phase epitaxy; GaN; nitrides;

D O I：

10.1016/S0022-0248(02)01841-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

P-GaN layer was grown by metalorganic vapor phase epitaxy at 1000degreesC with an LT-deposited AlN buffer layer. Bis(cyclopentadienyl) magnesium was used as a dopant and trimethyindium (TMIn) was simultaneously Supplied. N-2 carrier gas was used during GaN growth. The contact of as-grown GaN:Mg sample was Ohmic only for III-doped GaN. Others showed Schottky behavior. The hole concentration was increased up to 5.0 x 10(17) cm(-3) at room temperature for In-doped samples. Moreover. with increasing TMIn flow rate. the biaxial strain in as-grown p-GaN was reduced and accordingly the hole concentration was increased. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：503 / 506

页数：4

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