Enhanced structural and morphological properties of Gd-doped CeO2 thin films obtained by polymer-assisted deposition

被引：16

作者：

Mos, R. B. ^{[1
]}

Petrisor, T., Jr. ^{[1
]}

Nasui, M. ^{[1
]}

Calleja, A. ^{[2
]}

Puig, T. ^{[2
]}

Ciontea, L. ^{[1
]}

Petrisor, T. ^{[1
]}

机构：

[1] Tech Univ Cluj Napoca, Cluj Napoca 400114, Romania

[2] CSIC, Inst Ciencia Mat Barcelona ICMAB, Bellaterra 08193, Catalonia, Spain

来源：

MATERIALS LETTERS | 2014年 / 124卷

关键词：

Gd-doped ceria; Thin films; Polymer-assisted deposition; AFM; EPITAXIAL YBA2CU3O7;

D O I：

10.1016/j.matlet.2014.03.119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Gadolinium-doped ceria epitaxial thin films were grown on yttria-stabilized zirconia (YSZ) substrates by polymer-assisted deposition (PAD). PAD utilizes an aqueous polymer to bind a metal or metal complex that serves to encapsulate the metal, in order to prevent chemical reaction in solution and to maintain an even distribution of the metal ions into solution. The structural and morphological properties were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD pattern of the Gd-doped ceria (CGO) films indicated a dramatic improvement of the epitaxial growth with respect to pure CeO2 films. The CGO thin film morphology changes from rounded to plate-like grains when the annealing temperature increases due to an increase of atom mobility. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：306 / 309

页数：4

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