Power Delivery Network Design and Modeling for High Bandwidth Memory (HBM)

被引:0
|
作者
Shi, Wenjun [1 ]
Zhou, Yaping [1 ]
Sudhakaran, Sunil [1 ]
机构
[1] NVIDIA Corp, Santa Clara, CA 95050 USA
关键词
High Bandwidth Memory; simultanuous switching noise; power supply induced jitter;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A modeling method to consider simulation switching noise of HBM and its impact on HBM timing is described. This method combines partial element equivalent circuit model for power delivery network and S-parameters based HBM channel model together in HBM studies.
引用
收藏
页码:3 / 5
页数:3
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