20Gbit/s regenerative receiver IC using InP/InGaAs double-heterostructure bipolar transistors

被引：2
|
作者：
Sano, E
Kurishima, K
Yamahata, S
机构：
[1] NTT System Electronics Laboratories, Atsugi 243-01
来源：
ELECTRONICS LETTERS | 1997年 / 33卷 / 02期
关键词：
optical receivers; integrated circuits; gallium indium arsenide; indium phosphide; heterojunction bipolar transistors; wavelength division multiplexing;
D O I：
10.1049/el:19970101
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A regenerative receiver IC, constructed with a preamplifier. postamplifier automatic offset controller, PLL-based timing recovery circuit, and D-type flipflop, has been successfully fabricated. 20 Gbit/s error-free operation for an input dynamic range of 13 dB was achieved with a power dissipation of 0.6 W.
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页码：159 / 160
页数：2
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