Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer

被引：25
|
作者：
Nohira, H [1 ]
Shiraishi, T
Takahashi, K
Hattori, T
Kashiwagi, I
Ohshima, C
Ohmi, S
Iwai, H
Joumori, S
Nakajima, K
Suzuki, M
Kimura, K
机构：
[1] Musashi Inst Technol, Setagaya Ku, Tokyo 1588557, Japan
[2] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[3] Kyoto Univ, Sakyo Ku, Kyoto 6068501, Japan
来源：
APPLIED SURFACE SCIENCE | 2004年 / 234卷 / 1-4期
关键词：
Rutherford back scattering; angle-resolved photoelectron spectroscopy; high-k dielectrics; depth profiling; electronic band structure; La2O3;
D O I：
10.1016/j.apsusc.2004.05.032
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The composition and chemical structures of lanthanum oxide films were determined by combining angle-resolved photoelectron spectroscopy and high resolution Rutherford backscattering studies. Conduction and valence band discontinuity at La2O3/Si(1 0 0) interface was also determined by measuring the O 1s photoelectron energy loss and valence band spectra. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：493 / 496
页数：4
相关论文
共 50 条
  • [31] Electrical properties of La2O3 thin films grown on TiN/Si substrates via atomic layer deposition
    Park, Nam Kyun
    Kang, Dong Kyun
    Kim, Byong-Ho
    Jo, Sang Jin
    Ha, Jeong Sook
    APPLIED SURFACE SCIENCE, 2006, 252 (24) : 8506 - 8509
  • [32] Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study
    Zhang, Zhaofu
    Guo, Yuzheng
    Robertson, John
    MICROELECTRONIC ENGINEERING, 2019, 216
  • [33] Atomic-Scale Model and Electronic Structure of Cu2O/CH3NH3PbI3 Interfaces in Perovskite Solar Cells
    Castellanos-Aguila, Jesus E.
    Lodeiro, Lucas
    Menendez-Proupin, Eduardo
    Montero-Alejo, Ana L.
    Palacios, Pablo
    Conesa, Jose C.
    Wahnon, Perla
    ACS APPLIED MATERIALS & INTERFACES, 2020, 12 (40) : 44648 - 44657
  • [34] Electrical conduction mechanisms of metal/La2O3/Si structure -: art. no. 103503
    Chiu, FC
    Chou, HW
    Lee, JYM
    JOURNAL OF APPLIED PHYSICS, 2005, 97 (10)
  • [35] Atomic-scale structure of A12O3-ZrO2 mixed oxides prepared by laser ablation
    Yang, Muchun
    Dubiel, M.
    Hofmeister, H.
    Riehemann, W.
    X-RAY ABSORPTION FINE STRUCTURE-XAFS13, 2007, 882 : 563 - +
  • [36] Composition impacts of La2O3 on the structure and radiation shielding parameters of NiO-BaO-B2O3 glasses
    Babeer, Afaf M.
    Sayyed, M. I.
    Amin, Hesham Y.
    Mahmoud, Abd El-razek
    Sadeq, M. S.
    OPTICAL MATERIALS, 2024, 147
  • [37] Structure and chemical durability of calcium iron phosphate glasses doped with La2O3 and CeO2
    Shi, Qingshun
    Yue, Yunlong
    Qu, Ya
    Liu, Shiquan
    Khater, G. A.
    Zhang, Lulu
    Zhao, Jiling
    Kang, Junfeng
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2019, 516 : 50 - 55
  • [38] X-ray Photoelectron Spectroscopy Depth Profiling of La2O3/Si Thin Films Deposited by Reactive Magnetron Sputtering
    Ramana, C. V.
    Vemuri, R. S.
    Kaichev, V. V.
    Kochubey, V. A.
    Saraev, A. A.
    Atuchin, V. V.
    ACS APPLIED MATERIALS & INTERFACES, 2011, 3 (11) : 4370 - 4373
  • [39] Local atomic structure of the high refractive index La2O3–Nb2O5–B2O3 glasses
    Alekseev, R.O.
    Avakyan, L.A.
    Shakhgildyan, G.Yu.
    Komandin, G.A.
    Savinkov, V.I.
    Romanov, N.A.
    Veligzhanin, A.A.
    Lebedev, S.P.
    Ermakova, A.M.
    Sukharina, G.B.
    Bugaev, L.A.
    Sigaev, V.N.
    Journal of Alloys and Compounds, 2022, 917
  • [40] Atomic and Electronic Structure of the Al2O3/Ti5Si3 Interface
    Chumakova, L. S.
    Bakulin, A. V.
    Kulkova, S. E.
    PHYSICS OF PARTICLES AND NUCLEI LETTERS, 2023, 20 (05) : 1135 - 1137
12345