Atomic-scale depth profiling of composition, chemical structure and electronic band structure of La2O3/Si(100) interfacial transition layer

被引：25
|
作者：
Nohira, H [1 ]
Shiraishi, T
Takahashi, K
Hattori, T
Kashiwagi, I
Ohshima, C
Ohmi, S
Iwai, H
Joumori, S
Nakajima, K
Suzuki, M
Kimura, K
机构：
[1] Musashi Inst Technol, Setagaya Ku, Tokyo 1588557, Japan
[2] Tokyo Inst Technol, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[3] Kyoto Univ, Sakyo Ku, Kyoto 6068501, Japan
来源：
APPLIED SURFACE SCIENCE | 2004年 / 234卷 / 1-4期
关键词：
Rutherford back scattering; angle-resolved photoelectron spectroscopy; high-k dielectrics; depth profiling; electronic band structure; La2O3;
D O I：
10.1016/j.apsusc.2004.05.032
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The composition and chemical structures of lanthanum oxide films were determined by combining angle-resolved photoelectron spectroscopy and high resolution Rutherford backscattering studies. Conduction and valence band discontinuity at La2O3/Si(1 0 0) interface was also determined by measuring the O 1s photoelectron energy loss and valence band spectra. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：493 / 496
页数：4
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