Novel application of MgF2 as a back reflector in a-SiOx:H thin-film solar cells

被引：10
|
作者：
Kang, Dong-Won [1 ]
Sichanugrist, Porponth [1 ]
Konagai, Makoto [1 ,2 ]
机构：
[1] Tokyo Inst Technol, Dept Phys Elect, Tokyo 1528552, Japan
[2] Tokyo Inst Technol, Photovolta Res Ctr, Tokyo 1528552, Japan
来源：
APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 08期
关键词：
EFFICIENCY;
D O I：
10.7567/APEX.7.082302
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present high-quality a-SiOx:H solar cells with a very thin i-layer of 100 nm fabricated at a low temperature of 100 degrees C. To boost the photocurrent with such a thin absorber, we suggested the application of a low-index MgF2 buffer at the n-type nanocrystalline silicon oxide (n-nc-SiOx:H)/Ag nanotextured interface to suppress the absorption loss at the Ag back contact. The introduction of MgF2 of only a few nanometers (similar to 4 nm) thickness enhanced the reflection at the n-nc-SiOx:H/Ag interface, which resulted in the reinforcement of the short-circuit current by about 7.3% from 9.60 to 10.30 mA/cm(2) while almost maintaining V-oc and FF. We demonstrated the efficiency improvement of up to 7.66% by MgF2 at the back contact. (C) 2014 The Japan Society of Applied Physics
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页数：4
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