Gate Controlled Three-Terminal Metal Oxide Memristor

We discuss the theory, design, fabrication, and testing of a three-terminal memristor based on thin-film metal oxides. The fabricated device modifies a traditional SrTiO3 thin-film memristor to include a third control terminal. The results show the device conductance is continuous over three orders of magnitude, with significant retention and endurance, and comparatively low set and reset currents. The gate allows for continuous conductance state tuning, and allows for flexible architectures compared with traditional two-terminal memristors by separating the read and write terminals.