Gate Controlled Three-Terminal Metal Oxide Memristor

被引：38

作者：

Herrmann, Eric ^{[1
]}

Rush, Andrew ^{[1
]}

Bailey, Tony ^{[1
]}

Jha, Rashmi ^{[1
]}

机构：

[1] Univ Cincinnati, Dept Elect Engn & Comp Sci, Cincinnati, OH 45221 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2018年 / 39卷 / 04期

基金：

美国国家科学基金会;

关键词：

Thin film devices; memristors; nonvolatile memory; resistive RAM; neuromorphics; thin film transistors;

D O I：

10.1109/LED.2018.2806188

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We discuss the theory, design, fabrication, and testing of a three-terminal memristor based on thin-film metal oxides. The fabricated device modifies a traditional SrTiO3 thin-film memristor to include a third control terminal. The results show the device conductance is continuous over three orders of magnitude, with significant retention and endurance, and comparatively low set and reset currents. The gate allows for continuous conductance state tuning, and allows for flexible architectures compared with traditional two-terminal memristors by separating the read and write terminals.

引用

页码：500 / 503

页数：4

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