Next generation radiation-hardened SRAM for space applications

被引：0
|
作者：
Hafer, Craig [1 ]
Mabra, Jonathan [1 ]
Slocum, Duane [1 ]
Katkur, T. S. [2 ]
机构：
[1] Aeroflex Colorado Springs, 4350 Centennial Blvd, Colorado Springs, CO 80907 USA
[2] Univ Colorado, Colorado Springs, CO 80918 USA
来源：
2006 IEEE AEROSPACE CONFERENCE, VOLS 1-9 | 2006年
关键词：
D O I：
暂无
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
Aeroflex Colorado Springs has developed a monolithic 16M-bit SRAM radiation-hardened to greater than 100 krad(Si) total ionizing dose on TSMC's 0.18 mu m shallow trench isolation (STI) CMOS line using minimally invasive process intervention. Both single event latchup (SEL) and single event upset (SEU) due to charged particle strikes are mitigated by a combination of circuit design techniques, error detection and correction (EDAC), and enhanced layout design rules. The 16M-bit SRAM is SEL immune to greater than 105 MeV-cm(2)/mg. The SEU error rate is less than 2.9 x 10(-16) errors/bit-day.
引用
收藏
页码：2440 / +
页数：3
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