Radiation-hardened gate array with embedded SRAM

被引：0
|
作者：
Malashevich, N. [1 ]
Makarceva, M. [1 ]
Fedorov, R. [2 ]
机构：
[1] Sci Mfg Complex Technol Ctr, Moscow, Russia
[2] Natl Res Univ Elect Technol MIET, Moscow, Russia
来源：
2015 15TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS) | 2015年
关键词：
RAM; memory cell; gate array; radiation hardness;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
the problem of information storage reliability improvement in random access memory (RAM) devices oriented to application as part of gate arrays designed for space-related application is considered in this article.
引用
收藏
页数：4
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