Radiation-hardened 14T SRAM cell by polar design for space applications

In this paper, a radiation-hardened by polar design 14T (RHPD-14T) SRAM cell for space applications is proposed. Performance of the proposed RHPD-14T cell is analyzed by estimating various design metrices with 65-nm complementary metal-oxide-semiconductor (CMOS) technology. The proposed RHPD-14T can tolerate all single-node upset and partial double-node upset based on combining radiation hardened by polar design technology together with reasonable layout topology. Simulation results show that write access time of RHPD-14T is 1.83 x/1.59 x/1.56 x/1.12 x/1.05 x shorter than RSP-14T/QUCCE10T/DICE/S4P8N/We-Quatro (@VDD=1.2 V). Word line write trip voltage of RHPD-14T is 2.67 x/2.22 x/1.35 x/1.29 x/1.26 x higher than QUCCE-10T/DICE/We-Quatro/S4P8N/RSP-14T (@VDD=1.2 V). Hold static noise margin of RHPD-14T is 14.85 x/7.15 x/1.05 x higher than DICE/S4P8N/RHPD-12T (@VDD=1.2 V). In addition, Monte Carlo (MC) simulations have proved that RHPD-14T has low fluctuation, strong stability, stable recovery ability and strong single effect upset (SEU) hardened.