Isothermal annealing time effects on dielectric parameters of Au/SnO2/n-Si/Al structure

This work examines some electrical parameters of metal/oxide/semiconductor devices (Au/SnO2/n-Si/Al). For this purpose, SnO2 thin films were deposited via spin coating process on n-type silicon wafer with the orientation of (100). Four samples were fabricated with different isothermal annealing time. Dielectric parameters of dielectric loss (epsilon ''), dielectric constant (epsilon'), de conductivity (sigma(d epsilon)) and dielectric loss tangent (tan delta) of Au/SnO2/n-Si/Al devices were investigated as a function of thermal annealing time using capacitance-voltage (C-V/) and conductance-voltage (G-V) measurements at a frequency of 1MHz in the dark and at room temperature. The dielectric constant was found to lie between 7.00 and 11.96. The dielectric properties of metal/oxide/semiconductor structures have been determined to be seriously impacted by the thermal annealing time. The values of dielectric parameters showed a strong dependence on the applied voltage. In addition, the dielectrical data has been analyzed considering electric modulus formalism. Using electric modulus and complex permittivity the experimental data were analyzed. AFM images show that intensive thin films of SnO2 were obtained by spin coating. Experimental results show that the isothermal annealing time is an effective way to increase the dielectric constant and to decrease the dielectric loss of electronically devices such as Au/SnO2/n-Si diodes.