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To the Theory of Electronic States of an Epitaxial Graphene Bilayer
被引:0
|作者:
Abdullaev, G. O.
[1
]
Alisultanov, Z. Z.
[1
,2
]
机构:
[1] Russian Acad Sci, Amirkhanov Inst Phys, Dagestan Sci Ctr, Makhachkala, Russia
[2] Dagestan State Univ, Makhachkala, Russia
基金:
俄罗斯基础研究基金会;
关键词:
SUBSTRATE-INDUCED BANDGAP;
B 8-N COMPOUNDS;
CHARGE-TRANSFER;
LAYERS;
METAL;
D O I:
10.1134/S1063783419030028
中图分类号:
O469 [凝聚态物理学];
学科分类号:
070205 ;
摘要:
The energy spectrum of an epitaxial graphene bilayer is investigated. The most general case of spontaneous breaking of the P symmetry within and between the layers is considered. The influence of the gate voltage on the energy spectrum is studied. It is shown that a general profile of this influence substantially depends on the ratio between bandgaps corresponding to different layers. At a certain value of the Coulomb potential caused by the transition of a charge from the substrate, the bandgap collapses. These studies are carried out for two types of layer packing in the bilayer, namely, the AB and AA packings.
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页码:488 / 492
页数:5
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