To the Theory of Electronic States of an Epitaxial Graphene Bilayer

被引:0
|
作者
Abdullaev, G. O. [1 ]
Alisultanov, Z. Z. [1 ,2 ]
机构
[1] Russian Acad Sci, Amirkhanov Inst Phys, Dagestan Sci Ctr, Makhachkala, Russia
[2] Dagestan State Univ, Makhachkala, Russia
基金
俄罗斯基础研究基金会;
关键词
SUBSTRATE-INDUCED BANDGAP; B 8-N COMPOUNDS; CHARGE-TRANSFER; LAYERS; METAL;
D O I
10.1134/S1063783419030028
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The energy spectrum of an epitaxial graphene bilayer is investigated. The most general case of spontaneous breaking of the P symmetry within and between the layers is considered. The influence of the gate voltage on the energy spectrum is studied. It is shown that a general profile of this influence substantially depends on the ratio between bandgaps corresponding to different layers. At a certain value of the Coulomb potential caused by the transition of a charge from the substrate, the bandgap collapses. These studies are carried out for two types of layer packing in the bilayer, namely, the AB and AA packings.
引用
收藏
页码:488 / 492
页数:5
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