To the Theory of Electronic States of an Epitaxial Graphene Bilayer

被引：0

作者：

Abdullaev, G. O. ^{[1
]}

Alisultanov, Z. Z. ^{[1
,2
]}

机构：

[1] Russian Acad Sci, Amirkhanov Inst Phys, Dagestan Sci Ctr, Makhachkala, Russia

[2] Dagestan State Univ, Makhachkala, Russia

来源：

PHYSICS OF THE SOLID STATE | 2019年 / 61卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

SUBSTRATE-INDUCED BANDGAP; B 8-N COMPOUNDS; CHARGE-TRANSFER; LAYERS; METAL;

D O I：

10.1134/S1063783419030028

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The energy spectrum of an epitaxial graphene bilayer is investigated. The most general case of spontaneous breaking of the P symmetry within and between the layers is considered. The influence of the gate voltage on the energy spectrum is studied. It is shown that a general profile of this influence substantially depends on the ratio between bandgaps corresponding to different layers. At a certain value of the Coulomb potential caused by the transition of a charge from the substrate, the bandgap collapses. These studies are carried out for two types of layer packing in the bilayer, namely, the AB and AA packings.

引用

页码：488 / 492

页数：5

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