High resolution Gate Oxide Integrity (GOI) measurement in near-perfect silicon

被引：1

作者：

Murakami, Y ^{[1
]}

Yamazaki, T ^{[1
]}

Itou, W ^{[1
]}

Shingyouji, T ^{[1
]}

机构：

[1] Mitsubishi Mat Silicon Corp, Div Technol, Proc Technol Dept, Noda, Chiba 2780015, Japan

来源：

GATE DIELECTRIC INTEGRITY: MATERIAL, PROCESS, AND TOOL QUALIFICATION | 2000年 / 1382卷

关键词：

GOI; TZDB; TDDB; high resolution; grown-in defects; R-OSF;

D O I：

10.1520/STP13490S

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gate Oxide Integrity (GOI) measurements are performed for various types of silicon wafers: Pure Silicon(TM), Epitaxial, Hydrogen Annealed, Low COP CZ, and Conventional CZ wafers. A clear dependence of GOI parameters is observed with Time Zero Dielectric Breakdown (TZDB) and Time Dependent Dielectric Breakdown (TDDB) measurements. Using multisource measurement units can perform high resolution GOI measurements. Time Dependent Dielectric Breakdown (TDDB) measurements on 5300 MOS capacitors on a 200 mm wafer have been made successfully with this technique. High resolution GOI measurements, in particular, make clear the correlation between grown-in defects and oxide defects in CZ wafers. II is also demonstrated that this technique is highly suitable for the evaluation of various types of near-perfect silicon, which inherently has no defects.

引用

下载

页码：132 / 144

页数：13

共 50 条

[41] The Design of Near-Perfect Spectrum-Selective Mirror Based on Photonic Structures for Passive Cooling of Silicon Solar Cells
Gao, Mengyu
Xia, Ye
Li, Rong
Zhang, Zhen
He, Yutian
Zhang, Chi
Chen, Laijun
Qi, Lina
Si, Yang
Zhang, Qinghong
Zheng, Yuxiang
NANOMATERIALS, 2020, 10 (12) : 1 - 11
[42] Influence of crystal-originated `particle' microstructure on silicon wafers on gate oxide integrity
Miyazaki, Morimasa
Miyazaki, Sumio
Kitamura, Takafumi
Yanase, Yoshio
Ochiai, Takashi
Tsuya, Hideki
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1997, 36 (10): : 6187 - 6194
[43] Influence of crystal-originated ''particle'' microstructure on silicon wafers on gate oxide integrity
Miyazaki, M
Miyazaki, S
Kitamura, T
Yanase, Y
Ochiai, T
Tsuya, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (10): : 6187 - 6194
[44] Dependence of gate oxide integrity on grown-in defect density in Czochralski grown silicon
Lambert, U
Huber, A
Grabmeier, J
Obermeier, G
Vanhellemont, J
Wahlich, R
Kissinger, G
MICROELECTRONIC ENGINEERING, 1999, 48 (1-4) : 127 - 130
[45] Dependence of gate oxide integrity on grown-in defect density in Czochralski grown silicon
Lambert, U.
Huber, A.
Grabmeier, J.
Obermeier, G.
Vanhellemont, J.
Wahlich, R.
Kissinger, G.
Microelectronic Engineering, 1999, 48 (01): : 127 - 130
[46] THE EFFECTS OF POLISHING DAMAGE AND OXYGEN CONCENTRATION ON GATE OXIDE INTEGRITY IN SILICON-CRYSTALS
ABE, T
KATO, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (5A): : 1879 - 1883
[47] Dual-band high-Q near-perfect absorption by tilted Si-assisted metasurfaces
Zhang, Haosen
Wu, Kedi
Wang, Guo Ping
OPTICS LETTERS, 2024, 49 (12) : 3428 - 3431
[48] Silicon grisms for high resolution spectroscopy in the near infrared
Vitali, F
Cianci, E
Lorenzetti, D
Foglietti, V
Notargiacomo, A
Giovine, E
Oliva, E
OPTICAL AND IR TELESCOPE INSTRUMENTATION AND DETECTORS, PTS 1 AND 2, 2000, 4008 : 1383 - 1394
[49] IMPROVEMENT OF THIN-GATE OXIDE INTEGRITY USING THROUGH-SILICON-GATE NITROGEN ION-IMPLANTATION
HADDAD, S
LIANG, MS
IEEE ELECTRON DEVICE LETTERS, 1987, 8 (02) : 58 - 60
[50] Oxide defect annihilation generation following high temperature annealing: A gate oxide integrity evaluation
Tamatsuka, M
Sasaki, T
Hagimoto, K
Rozgonyi, GA
ULSI SCIENCE AND TECHNOLOGY / 1997: PROCEEDINGS OF THE SIXTH INTERNATIONAL SYMPOSIUM ON ULTRALARGE SCALE INTEGRATION SCIENCE AND TECHNOLOGY, 1997, 1997 (03): : 183 - 194

← 1 2 3 4 5 →