High resolution Gate Oxide Integrity (GOI) measurement in near-perfect silicon

被引：1
|
作者：
Murakami, Y [1 ]
Yamazaki, T [1 ]
Itou, W [1 ]
Shingyouji, T [1 ]
机构：
[1] Mitsubishi Mat Silicon Corp, Div Technol, Proc Technol Dept, Noda, Chiba 2780015, Japan
来源：
GATE DIELECTRIC INTEGRITY: MATERIAL, PROCESS, AND TOOL QUALIFICATION | 2000年 / 1382卷
关键词：
GOI; TZDB; TDDB; high resolution; grown-in defects; R-OSF;
D O I：
10.1520/STP13490S
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Gate Oxide Integrity (GOI) measurements are performed for various types of silicon wafers: Pure Silicon(TM), Epitaxial, Hydrogen Annealed, Low COP CZ, and Conventional CZ wafers. A clear dependence of GOI parameters is observed with Time Zero Dielectric Breakdown (TZDB) and Time Dependent Dielectric Breakdown (TDDB) measurements. Using multisource measurement units can perform high resolution GOI measurements. Time Dependent Dielectric Breakdown (TDDB) measurements on 5300 MOS capacitors on a 200 mm wafer have been made successfully with this technique. High resolution GOI measurements, in particular, make clear the correlation between grown-in defects and oxide defects in CZ wafers. II is also demonstrated that this technique is highly suitable for the evaluation of various types of near-perfect silicon, which inherently has no defects.
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页码：132 / 144
页数：13
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