A Study of Advanced Modeling Methodology of CMOS-compatible RF-MEMS Devices for Integrated Circuit Design

被引：0

作者：

Wu, Wenzheng ^{[1
,2
]}

Jia, Mengjun ^{[1
]}

Li, Xinxin ^{[3
]}

Hao, Yilong ^{[1
]}

Zhang, Xing ^{[2
]}

Cheng, Yuhua ^{[1
]}

机构：

[1] Peking Univ, SHRIME, 608 Shengxia Rd,Zhang Jiang High Tech Pk, Shanghai 201203, Peoples R China

[2] Peking Univ, Sch Software & Microelect, Beijing 102600, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol SIMIT, Shanghai 200050, Peoples R China

来源：

2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the rapid development of CMOS-compatible MEMS technology, it has been used to improve the performance of monolithic integrated RF circuits. To take advantages of the MEMS devices in RF circuits, accurate models are needed, with the considerations of important effects that impact the electrical behavior of the devices. In this paper, we explore the modeling methodology for CMOS-compatible MEMS inductors, which are fabricated with two different process approaches. Based on device simulation results for mechanical and electrical behavior, we propose a SPICE-like model for CMOS-compatible RF-MEMS inductors used for integrated circuit design.

引用

页码：516 / +

页数：2

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