A Study of Advanced Modeling Methodology of CMOS-compatible RF-MEMS Devices for Integrated Circuit Design

被引：0

作者：

Wu, Wenzheng ^{[1
,2
]}

Jia, Mengjun ^{[1
]}

Li, Xinxin ^{[3
]}

Hao, Yilong ^{[1
]}

Zhang, Xing ^{[2
]}

Cheng, Yuhua ^{[1
]}

机构：

[1] Peking Univ, SHRIME, 608 Shengxia Rd,Zhang Jiang High Tech Pk, Shanghai 201203, Peoples R China

[2] Peking Univ, Sch Software & Microelect, Beijing 102600, Peoples R China

[3] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol SIMIT, Shanghai 200050, Peoples R China

来源：

2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

With the rapid development of CMOS-compatible MEMS technology, it has been used to improve the performance of monolithic integrated RF circuits. To take advantages of the MEMS devices in RF circuits, accurate models are needed, with the considerations of important effects that impact the electrical behavior of the devices. In this paper, we explore the modeling methodology for CMOS-compatible MEMS inductors, which are fabricated with two different process approaches. Based on device simulation results for mechanical and electrical behavior, we propose a SPICE-like model for CMOS-compatible RF-MEMS inductors used for integrated circuit design.

引用

页码：516 / +

页数：2

共 50 条

[21] RF Reactive Sputtering AlN Thin Film at Room Temperature for CMOS-compatible MEMS Application
Liu, Wenjuan
Xu, Weijiang
Wang, Weizhen
He, Leming
Zhou, Jia
Radhakrishnan, K.
Yu, Hao
Ren, Junyan
2017 JOINT IEEE INTERNATIONAL SYMPOSIUM ON THE APPLICATIONS OF FERROELECTRIC (ISAF)/INTERNATIONAL WORKSHOP ON ACOUSTIC TRANSDUCTION MATERIALS AND DEVICES (IWATMD)/PIEZORESPONSE FORCE MICROSCOPY WORKSHOP (PFM), 2017, : 52 - 55
[22] Design and simulation of integrated inductors on porous silicon in CMOS-compatible processes
Contopanagos, H.
Nassiopoulou, A. G.
SOLID-STATE ELECTRONICS, 2006, 50 (7-8) : 1283 - 1290
[23] Modeling of Thermal Conductivity for a CMOS-Compatible MEMS-ROIC Contact by TiN Nanotubes
Michel, Marvin
Vogt, Holger
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (08) : 3485 - 3491
[24] Design and implementation of a wideband LNA with compatible RF-MEMS component for IEEE 802.11 a applications
Kaynak, Mehmet
Gurbuz, Yasar
2006 IEEE 14TH SIGNAL PROCESSING AND COMMUNICATIONS APPLICATIONS, VOLS 1 AND 2, 2006, : 878 - +
[25] Integrated NiSi waveguide heaters for CMOS-compatible silicon thermo-optic devices
Van Campenhout, Joris
Green, William M. J.
Assefa, Solomon
Vlasov, Yurii A.
OPTICS LETTERS, 2010, 35 (07) : 1013 - 1015
[26] Multiphysics design optimization of RF-MEMS switch using response surface methodology
Younis, Sadia
Saleem, Muhammad Mubasher
Zubair, Muhammad
Zaidi, Syed Muhammad Tahir
MICROELECTRONICS JOURNAL, 2018, 71 : 47 - 60
[27] Variable capacitors and tunable LC-tanks formed by CMOS-compatible metal MEMS for RF ICs
Gu, Lei
Li, Xinxin
2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2, 2007, : 427 - +
[28] RF-MEMS switching devices using vertical comb-drive actuation in the CMOS process
Naito, Y.
Nakamura, K.
Onishi, K.
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 2010, 20 (04)
[29] Comparative study of DSP techniques for the effective modeling and design of highly complex RF-MEMS structures
Lee, JH
Bushyager, N
Tentzeris, MM
2005 WORKSHOP ON COMPUTATIONAL ELECTROMAGNETICS IN TIME-DOMAIN (CEM-TD), 2005, : 88 - 91
[30] Compact modeling of noise for RF CMOS circuit design
Scholten, AJ
Tiemeijer, LF
van Langevelde, R
Havens, RJ
Zegers-van Duijnhoven, ATA
de Kort, R
Venezia, VC
Klaassen, DBM
NOISE IN DEVICES AND CIRCUITS, 2003, 5113 : 93 - 104

← 1 2 3 4 5 →