High-efficiency K-band MMIC power amplifier using multi-harmonic load terminations

被引：2

作者：

Tu, Zhichen ^{[1
]}

Li, Bo ^{[1
]}

Shang, Yongheng ^{[1
]}

Wang, Zhiyu ^{[1
]}

Wang, Liping ^{[1
]}

Liu, Dongdong ^{[1
]}

Zhou, Min ^{[1
]}

Huang, Zhengliang ^{[1
]}

Yu, Faxin ^{[1
]}

机构：

[1] Zhejiang Univ, Sch Aeronaut & Astronaut, Hangzhou 310027, Zhejiang, Peoples R China

来源：

MICROELECTRONICS JOURNAL | 2015年 / 46卷 / 12期

基金：

中国国家自然科学基金;

关键词：

High-efficiency; K-band; MMIC power amplifier; GaAs PHEMT; Multi-harmonic load;

D O I：

10.1016/j.mejo.2015.07.005

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a high-efficiency K-band MMIC power amplifier using multi-harmonic load terminations is designed and implemented in a 0.15 mu m GaAs PHEMT processing technology. At the bias voltages of VD=5 V and VG= -0.9 V, the three-stage MMIC amplifier attains 25 dB linear gain in average, 20 dBm saturation power, lower than 15 dB input return loss, and lower than 10 dB output return loss from 25 to 27 GHz. With this 2 GHz bandwidth, the proposed amplifier can provide 40% higher power added efficiency than that of the conventional designs. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：1453 / 1458

页数：6

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