P-InAsSbP/n0-InAs/n+-InAs Photodiodes for Operation at Moderate Cooling (150-220 K)

被引：6
|
作者：
Brunkov, P. N. [1 ,2 ]
Il'inskaya, N. D. [1 ]
Karandashev, S. A. [1 ]
Latnikova, N. M. [3 ]
Lavrov, A. A. [1 ]
Matveev, B. A. [1 ]
Petrov, A. S. [4 ]
Remennyi, M. A. [1 ]
Sevostyanov, E. N. [3 ]
Stus, N. M. [1 ]
机构：
[1] Ioffe Inst, St Petersburg 194021, Russia
[2] Natl Res Univ Informat Technol Mech & Opt ITMO, St Petersburg 197101, Russia
[3] LETI Ulyanov Lenin St Petersburg Electrotech Univ, St Petersburg 197376, Russia
[4] Electron Natl Res Inst, St Petersburg 194223, Russia
来源：
SEMICONDUCTORS | 2014年 / 48卷 / 10期
关键词：
INAS;
D O I：
10.1134/S1063782614100066
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
InAs single hetero structure photodiodes were considered as alternatives to cooled CdHgTe-based detectors sensitive to radiation around 3 mu m spectral region in a wide temperature range 77-300 K. Estimations of detectivity as well as p-n junction position in InAs heterostructures have been obtained via photo-electrical and AFM measurements.
引用
收藏
页码：1359 / 1362
页数：4
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