Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching

被引：19
|
作者：
Khuat, Vanthanh [1 ,2 ,3 ]
Chen, Tao [1 ,2 ]
Gao, Bo [1 ,2 ]
Si, Jinhai [1 ,2 ]
Ma, Yuncan [1 ,2 ]
Hou, Xun [1 ,2 ]
机构：
[1] Xi An Jiao Tong Univ, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Peoples R China
[2] Xi An Jiao Tong Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Sch Elect & Informat Engn, Xian 710049, Peoples R China
[3] Quy Don Tech Univ, Hanoi 7EN 248, Vietnam
来源：
APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 24期
基金：
中国国家自然科学基金;
关键词：
NANOSTRUCTURES; MECHANISM; MEMS;
D O I：
10.1063/1.4883880
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave. (C) 2014 AIP Publishing LLC.
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页数：5
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