Uniform nano-ripples on the sidewall of silicon carbide micro-hole fabricated by femtosecond laser irradiation and acid etching

被引：19

作者：

Khuat, Vanthanh ^{[1
,2
,3
]}

Chen, Tao ^{[1
,2
]}

Gao, Bo ^{[1
,2
]}

Si, Jinhai ^{[1
,2
]}

Ma, Yuncan ^{[1
,2
]}

Hou, Xun ^{[1
,2
]}

机构：

[1] Xi An Jiao Tong Univ, Key Lab Phys Elect & Devices, Minist Educ, Xian 710049, Peoples R China

[2] Xi An Jiao Tong Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Sch Elect & Informat Engn, Xian 710049, Peoples R China

[3] Quy Don Tech Univ, Hanoi 7EN 248, Vietnam

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 24期

基金：

中国国家自然科学基金;

关键词：

NANOSTRUCTURES; MECHANISM; MEMS;

D O I：

10.1063/1.4883880

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Uniform nano-ripples were observed on the sidewall of micro-holes in silicon carbide fabricated by 800-nm femtosecond laser and chemical selective etching. The morphology of the ripple was analyzed using scanning electronic microscopy. The formation mechanism of the micro-holes was attributed to the chemical reaction of the laser affected zone with mixed solution of hydrofluoric acid and nitric acid. The formation of nano-ripples on the sidewall of the holes could be attributed to the standing wave generated in z direction due to the interference between the incident wave and the reflected wave. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 25 条

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