Nanoporous, low-dielectric constant organosilicate materials derived from inorganic polymer blends

被引：0
|
作者：
Miller, RD
Volksen, W
Lee, VY
Connor, E
Magbitang, T
Zafran, R
Sundberg, L
Hawker, CJ
Hedrick, JL
Huang, E
Toney, M
Huang, QR
Frank, CW
Kim, HC
机构：
[1] IBM Corp, Almaden Res Ctr, San Jose, CA 95120 USA
[2] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA
[3] State Univ New Jersey, Dept Food Sci, New Brunswick, NJ 08901 USA
[4] Stanford Univ, Dept Chem Engn, Stanford, CA USA
来源：
POLYMERS FOR MICROELECTRONICS AND NANOELECTRONICS | 2004年 / 874卷
关键词：
D O I：
暂无
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Porous materials will be needed to reach the ultralow-k dielectric on-chip insulator objectives for advanced semiconductor chips. Nanoporous organosilicates can be prepared using thermally labile macromolecular porogens and silsesquioxane resins. This process readily achieves dielectric constants of 1.5. There is a significant difference in porous morphologies depending on whether the porogens function by nucleation and growth or an actual templating mechanism.
引用
收藏
页码：144 / 160
页数：17
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