Photocurable Polymers for Ion Selective Field Effect Transistors. 20 Years of Applications

被引:23
|
作者
Abramova, Natalia [1 ]
Bratov, Andrei [1 ]
机构
[1] CSIC, CNM, IMB, Inst Microelect Barcelona, Barcelona 08193, Spain
关键词
ISFET; photocurable; polymers; membrane; chemical sensor; PHOTO-CURED POLYMERS; PLASTICIZER-FREE POLYMER; ELECTRODE MEMBRANES; SENSITIVE MEMBRANES; SENSOR; POLYURETHANE; TONGUE; K+; NITRATE; MATRIX;
D O I
10.3390/s90907097
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
Application of photocurable polymers for encapsulation of ion selective field effect transistors (ISFET) and for membrane formation in chemical sensitive field effect transistors (ChemFET) during the last 20 years is discussed. From a technological point of view these materials are quite interesting because they allow the use of standard photolithographic processes, which reduces significantly the time required for sensor encapsulation and membrane deposition and the amount of manual work required for this, all items of importance for sensor mass production. Problems associated with the application of this kind of polymers in sensors are analysed and estimation of future trends in this field of research are presented.
引用
收藏
页码:7097 / 7110
页数:14
相关论文
共 50 条
  • [41] PHYSICS OF AMORPHOUS SILICON BASED ALLOY FIELD-EFFECT TRANSISTORS.
    Shur, M.
    Hack, M.
    Journal of Applied Physics, 1984, 55 (10): : 3831 - 3842
  • [42] Directed Assembly of Single Wall Carbon Nanotube Field Effect Transistors.
    Penzo, Erika
    Palma, Matteo
    Chenet, Daniel A.
    Ao, Geyou
    Zheng, Ming
    Hone, James C.
    Wind, Shalom J.
    ACS NANO, 2016, 10 (02) : 2975 - 2981
  • [43] Improvement of Linearity and Symmetry of Output Characteristics of Field-effect Transistors.
    Nawrocki, Zdzislaw
    Elektronika Warszawa, 1981, 22 (06): : 34 - 37
  • [44] Organic n-channel materials for field-effect transistors.
    Laquindanum, JG
    Katz, HE
    Dodabalapur, A
    Lovinger, AJ
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1997, 213 : 368 - POLY
  • [45] Organic-inorganic thin-film field effect transistors.
    Kagan, CR
    Mitzi, DB
    Dimitrakopoulos, CD
    Breen, TL
    Afzali, A
    Kosbar, LL
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2001, 221 : U632 - U632
  • [46] SEMICONDUCTORS FOR HIGH-VOLTAGE, VERTICAL CHANNEL FIELD EFFECT TRANSISTORS.
    Baliga, B.J.
    Journal of Applied Physics, 1982, 53 (3 pt 1): : 1759 - 1764
  • [47] Measurement Methods of Breakdown Voltages in Junction Field-Effect Transistors.
    Grabowski, Wojciech
    Elektronika, 1972, 13 (11): : 457 - 459
  • [48] Solution deposition and multi functionality of organic field-effect transistors.
    Katz, HE
    Dodabalapur, A
    Someya, T
    Crone, B
    Hong, XM
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 2002, 223 : C22 - C22
  • [49] Fast and Precise Determination of the 'Small Signal' Equivalent Circuit of Field Effect Transistors. .
    Dambrine, Gilles
    Cappy, Alain
    Annales des Telecommunications/Annals of Telecommunications, 1988, 43 (5-6): : 274 - 281
  • [50] Encapsulation of chemically sensitive field-effect transistors with photocurable epoxy resins
    Dumschat, C.
    Mueller, H.
    Rautschek, H.
    Timpe, H.-J.
    Hoffmann, W.
    Pham, M.T.
    Hueller, J.
    Sensors and Actuators, B: Chemical, 1990, B2 (04) : 271 - 276