One-dimensional InGaZnO Field-effect Transistor on a Polyimide Wire Substrate for an Electronic Textile

被引：8
|
作者：
Yoo, Tae-Hee [1 ]
Sang, Byoung-In [1 ]
Hwang, Do Kyung [2 ]
机构：
[1] Hanyang Univ, Dept Chem Engn, Seoul 04763, South Korea
[2] Korea Inst Sci & Technol, Postsilicon Semicond Inst, Ctr Optoelect Mat & Devices, Seoul 02792, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2016年 / 68卷 / 04期
关键词：
InGaZnO; Electronic textiles; 1-D field-effect transistor; Resistive-load inverter; THIN-FILM TRANSISTORS; ROOM-TEMPERATURE; WEARABLE ELECTRONICS; TRANSPARENT; FIBER; INVERTER;
D O I：
10.3938/jkps.68.599
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Amorphous InGaZnO (IGZO) is a promising semiconducting material to replace amorphous and polycrystalline Si. IGZO-based field-effect transistors (FET) can be versatile platforms for various electronic or optoelectronic applications. Here, we report on a one-dimensional (1-D) IGZO FET fabricated on a flexible polyimide wire substrate for electronic textiles (e-textiles). This flexible 1-D IGZO FET shows a high mobility of 18.18 cm(2)/Vs with a relatively good on/off current ratio of 10(4) at operating voltages below 5 V. Furthermore, a resistive-load inverter is implemented by connecting the 1-D IGZO FET to an external load resistor. Such an inverter exhibits obvious voltage switching characteristics, verifying the potential it is being a basic building block for an e-textile circuit system.
引用
收藏
页码：599 / 603
页数：5
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