CRYOGENIC FIELD-EFFECT TRANSISTOR WITH SINGLE ELECTRONIC CHARGE SENSITIVITY

被引：21
|
作者：
MAR, DJ
WESTERVELT, RM
HOPKINS, PF
机构：
[1] HARVARD UNIV, DEPT PHYS, CAMBRIDGE, MA 02138 USA
[2] UNIV CALIFORNIA, DEPT MAT, SANTA BARBARA, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 05期
关键词：
D O I：
10.1063/1.111072
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have fabricated matched pairs of cryogenic field-effect transistors with input charge sensitivity q(n)=0.01 e/root Hz at T = 1.3 K, low input capacitance 0.4 pF, and extremely high input resistance in excess of 10(15) Omega. Low leakage permits dc charge-coupled operation for times up to similar to 10(3) s. The channel noise is characterized by a flat spectrum at high frequencies, and 1/f noise below a corner frequency f(c)<1 kHz. These devices can resolve charge differences as small as q(n) root f(c)=0.4e.
引用
收藏
页码：631 / 633
页数：3
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