CRYOGENIC FIELD-EFFECT TRANSISTOR WITH SINGLE ELECTRONIC CHARGE SENSITIVITY

被引：21

作者：

MAR, DJ

WESTERVELT, RM

HOPKINS, PF

机构：

[1] HARVARD UNIV, DEPT PHYS, CAMBRIDGE, MA 02138 USA

[2] UNIV CALIFORNIA, DEPT MAT, SANTA BARBARA, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.111072

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have fabricated matched pairs of cryogenic field-effect transistors with input charge sensitivity q(n)=0.01 e/root Hz at T = 1.3 K, low input capacitance 0.4 pF, and extremely high input resistance in excess of 10(15) Omega. Low leakage permits dc charge-coupled operation for times up to similar to 10(3) s. The channel noise is characterized by a flat spectrum at high frequencies, and 1/f noise below a corner frequency f(c)<1 kHz. These devices can resolve charge differences as small as q(n) root f(c)=0.4e.

引用

页码：631 / 633

页数：3

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