Lattice expansion in islands stabilized by electron confinement: Ag on Si(111)-7x7

被引:17
|
作者
Unal, Baris [2 ,3 ]
Belianinov, Alex [3 ,4 ]
Thiel, P. A. [2 ,3 ,4 ]
Tringides, M. C. [1 ,3 ]
机构
[1] Iowa State Univ, Dept Phys & Astron, Ames, IA 50011 USA
[2] Iowa State Univ, Dept Mat Sci & Engn, Ames, IA 50011 USA
[3] Iowa State Univ, Ames Lab, Ames, IA 50011 USA
[4] Iowa State Univ, Dept Chem, Ames, IA 50011 USA
关键词
QUANTUM-WELL STATES; LOW-TEMPERATURE; X-RAY; GROWTH; FILMS; SURFACES; PHOTOEMISSION; DIFFRACTION; AG/SI(111); THICKNESS;
D O I
10.1103/PhysRevB.81.085411
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ag on Si(111)-7x7 was one of the first systems where height selection of metal islands was attributed to electron confinement, i.e., stabilization of selected heights through a quantum size effect (QSE). However, it has been puzzling how the requisite electron standing waves can form, because the Fermi level E-F (along the growth [111] direction) is within the gap for bulk Ag. With detailed experiments over a wide coverage and temperature range, we show that a large increase of 12% is present in the interlayer spacing within the bilayer islands. This can shift E-F below the gap, allowing electron confinement to control height selection. This conclusion is also supported by the observation of a corrugation pattern of period 3 nm on top of the Ag islands, which is bias dependent and can only be the result of QSE-generated standing waves normal to the film.
引用
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页数:4
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