Device-Circuit Interactions and Impact on TFT Circuit-System Design

被引：10

作者：

Cheng, Xiang ^{[1
]}

Lee, Sungsik ^{[1
]}

Chaji, Reza ^{[2
]}

Nathan, Arokia ^{[1
]}

机构：

[1] Univ Cambridge, Elect Engn Div, Dept Engn, Cambridge CB3 0FA, England

[2] IGNIS Innovat Inc, Waterloo, ON N2V 2C5, Canada

来源：

IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS | 2017年 / 7卷 / 01期

基金：

欧盟地平线“2020”;

关键词：

Analog circuit; compensation; device-circuit; interaction; TFT; V-T shift; THIN-FILM TRANSISTORS; THRESHOLD VOLTAGE SHIFT; LIGHT-EMITTING DIODE; PIXEL CIRCUIT; A-SI; CONTACT RESISTANCE; AMOLED DISPLAY; DRIVING METHOD; COMPENSATION; ARCHITECTURE;

D O I：

10.1109/JETCAS.2016.2621348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews the importance of device-circuit interactions (DCI) and its consideration when designing thin film transistor circuits and systems. We examine temperature-and process-induced variations and propose a way to evaluate the maximum achievable intrinsic performance of the TFT. This is aimed at determining when DCI becomes crucial for a specific application. Compensation methods are then reviewed to show examples of how DCI is considered in the design of AMOLED displays. Other designs such as analog front-end and image sensors are also discussed, where alternate circuits should be designed to overcome the limitations of the intrinsic device properties.

引用

页码：71 / 80

页数：10

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